Resistive switching in transition metal oxides
نویسندگان
چکیده
منابع مشابه
Resistive Switchings in Transition Metal Oxides
Promising candidates for the next-generation memory devices have emerged one after another for the last decade. Ferroelectric random access memories (FeRAM), magnetoresistive random access memories (MRAM), phase change memories (PCM) are indeed at the dawn of the international development races. Along with those three fascinating memories, we focus here on probably the most seminal candidate of...
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ژورنال
عنوان ژورنال: Materials Today
سال: 2008
ISSN: 1369-7021
DOI: 10.1016/s1369-7021(08)70119-6